ret y rt - low power loss, high efficiency - ideal for automated placement - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition sy m bol u nit v rrm v v rms v v dc v i f(av) a i rrm a a ma dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1309061 version: f13 0.76 0.8 0.67 0.7 to-263ab (d 2 pak) i r typ max 0.3 30 0.62 10 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle m brs1 5 h 4 5 ct 4531 45 1 typ max 0.64 typical thermal resistance 2 operating junction temperature range - 55 to +175 storage temperature range - 55 to +175 voltage rate of change (rated v r ) 10000 v 0.68 peak repetitive reverse surge current (note 1) maximum instantaneous forward voltage (note 2) i f = 7.5 a, t j =25 i f = 7.5 a, t j =125 i f = 15 a, t j =25 i f = 15 a, t j =125 v f 0.55 0.6 maximum reverse current @ rated v r t j =25 t j =125 peak repetitive forward current (rated vr, square wave, 20khz) i frm 15 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a maximum dc blocking voltage maximum average forward rectified current 15 maximum repetitive peak reverse voltage maximum rms voltage polarity: as marked weight: 1.35 g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec m ech an i cal dat a case: to-263ab (d 2 pak) molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test MBRS15H45CT taiwan semiconductor dual common cathode schottk y rectifier feat u res - moisture sensitivity level : level 1, per j-std-020 downloaded from: http:///
part n o. part n o. MBRS15H45CTMBRS15H45CT MBRS15H45CT (ta=25 unless otherwise noted) document number: ds_d1309061 version: f13 MBRS15H45CThrn h rn aec-q101 qualified rat i n gs an d ch aract eri st i cs cu rv es MBRS15H45CT rn rn MBRS15H45CT rng rn g green compound ex am ple preferred p/n aec-q1 0 1 qu ali fi ed pack i n g code green com pou n d code descri pt i on MBRS15H45CT prefix "h" rn suffix "g" d 2 pak 800 / 13" paper reel c0 d 2 pak 50 / tube MBRS15H45CT taiwan semiconductor orderi n g i n form at i on aec-q1 0 1 qu ali fi ed pack i n g code green com pou n d code pack age pack i n g 0 5 10 15 20 0 25 50 75 100 125 150 175 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload 0 30 60 90 120 150 180 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.01 0.1 1 10 100 1000 20 40 60 80 100 instantaneous reverse a current ( a) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics tj=125 tj=25 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward a current (a) forward voltage (v) fig. 3 typical forward characteristics tj=125 tj=25 downloaded from: http:///
min max min max a - 10.5 - 0.413 b 14.60 15.88 0.575 0.625 c 2.41 2.67 0.095 0.105 d 0.68 0.94 0.027 0.037 e 2.29 2.79 0.090 0.110 f 4.44 4.70 0.175 0.185 g 1.14 1.40 0.045 0.055 h 1.14 1.40 0.045 0.055 i 8.25 9.25 0.325 0.364 j 0.36 0.53 0.014 0.021 k 2.03 2.79 0.080 0.110 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1309061 version: f13 0.3270.043 0.138 0.665 0.374 0.098 f9 . 5 g2 . 5 m ark i n g di agram c1 . 1 d3 . 5 e 16.9 su ggest ed pad lay ou t symbol unit (mm) a 10.8 b8 . 3 unit (inch) 0.425 MBRS15H45CT taiwan semiconductor pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p 0.1 1 10 100 1000 0.01 0.1 1 10 transient thermal impedance a ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance downloaded from: http:///
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